Thin film transistor substrate having metal oxide semiconductor and manufacturing the same

ABSTRACT

The present disclosure relates to a thin film transistor substrate having a metal oxide semiconductor for flat panel displays and a method for manufacturing the same. The present disclosure suggests a thin film transistor substrate including: a gate electrode on a substrate; a gate insulating layer covering the gate electrode; a source electrode overlapping with one side of the gate electrode on the gate insulating layer; a drain electrode being apart from the source electrode and overlapping with other side of the gate electrode on the gate insulating layer; an oxide semiconductor layer contacting an upper surface of the source electrode and the drain electrode, and extending from the source electrode to the drain electrode; and an etch stopper having the same shape with the oxide semiconductor layer, and contacting an upper surface of the oxide semiconductor layer.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority to Patent Application No.10-2013-0148531 filed on Dec. 2, 2013 in Republic of Korea, which isincorporated by reference herein in its entirety.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present disclosure relates to a thin film transistor (TFT) substratehaving a metal oxide semiconductor for flat panel displays and a methodfor manufacturing the same. Particularly, the present disclosure relatesto a thin film transistor substrate and a manufacturing method the samefor the flat panel display in which an oxide semiconductor material isformed after forming the source-drain electrode so that the channel areacan be precisely defined.

2. Discussion of the Related Art

Nowadays, as the information society is developed, the requirements ofdisplays for representing information are increasing. Accordingly, thevarious flat panel displays (FPDs) are developed for overcoming manydrawbacks of the cathode ray tube (CRT) such as heavy weight and bulkvolume. The flat panel display devices include the liquid crystaldisplay device (LCD), the field emission display (FED), the plasmadisplay panel (PDP), the organic light emitting display device (OLED)and the electrophoresis display device (ED).

The display panel of a flat panel display may include a thin filmtransistor substrate having a thin film transistor allocated in eachpixel region arrayed in a matrix manner. For example, the liquid crystaldisplay device represents video data by controlling the lighttransitivity of the liquid crystal layer using the electric fields.According to the direction of the electric field, the LCD can beclassified in the two major types; one is vertical electric field typeand the other is the horizontal electric field type.

For the vertical electric field type LCD, a common electrode formed onan upper substrate and a pixel electrode formed on a lower substrate arefacing with each other for forming an electric field of which directionis perpendicular to the substrate face. A twisted nematic (TN) liquidcrystal layer disposed between the upper substrate and the lowersubstrate is driven by the vertical electric field. The verticalelectric field type LCD has merit of higher aperture ratio, while it hasdemerit of narrower view angle about 90 degree.

For the horizontal electric field type LCD, a common electrode and apixel electrode are formed on the same substrate in parallel. A liquidcrystal layer disposed between an upper substrate and a lower substrateis driven in In-Plane-Switching (IPS) mode by an electric field parallelto the substrate face. The horizontal electric field type LCD has amerit of wider view angle over 160 degrees and faster response speedthan the vertical electric field type LCD. However, the horizontalelectric field type LCD may have demerits such as low aperture ratio andtransitivity ratio of the back light.

In the IPS mode LCD, for example, in order to form the in-plane electricfield, the gap between the common electrode and the pixel electrode maybe larger than the gap (or “Cell Gap”) between the upper substrate andthe lower substrate, and in order to get enough strength of the electricfield, the common electrode and the pixel electrode may have a strippattern having certain width. Between the pixel electrode and the commonelectrode of the IPS mode LCD, the electric field horizontal with thesubstrate is formed. However, just over the pixel electrode and thecommon electrode, there is no electric field. That is, the liquidcrystal molecules disposed just over the pixel electrodes and the commonelectrodes are not driven but maintain the initial conditions (theinitial alignment direction). As the liquid crystal molecules in theinitial condition cannot control the light transitivity properly, theaperture ratio and the luminescence may be degraded.

For resolving these demerits of the IPS mode LCD, the fringe fieldswitching (FFS) type LCD driven by the fringe electric field has beenproposed. The FFS type LCD comprises the common electrode and the pixelelectrode with the insulating layer there-between, and the gap betweenthe pixel electrode and the common electrode is set narrower than thegap between the upper substrate and the lower substrate. So that, afringe electric field having a parabola shape is formed in the spacebetween the common electrode and the pixel electrode as well over theseelectrodes. Therefore, most of all liquid crystal molecules disposedbetween the upper substrate and the lower substrate can be driven bythis fringe field. As a result, it is possible to enhance the apertureratio and the front luminescence.

For the fringe field type liquid crystal display, the common electrodeand the pixel electrode are disposed closely each other or in anoverlapped manner, so that a storage is formed between the commonelectrode and the pixel electrode. Therefore, the fringe field typeliquid crystal display has a merit in that there is no extra space forforming the storage in the pixel region. However, when a large areadisplay is formed in a fringe field type, the pixel region would begetting larger and the storage would be getting larger and larger. Inthat case, the thin film transistor should have also larger size fordriving/charging the enlarged storage in a short time period.

To address this problem, the thin film transistor having a metal oxidesemiconductor material is applied because it has the high currentcontrol characteristics without enlarging the size of the thin filmtransistor. FIG. 1 is a plane view illustrating a thin film transistorsubstrate having an oxide semiconductor layer included in a fringe fieldtype liquid crystal display according to the related art. FIG. 2 is across-sectional view illustrating the structure of the thin filmtransistor substrate of FIG. 1 by cutting along the line I-I′ accordingto the related art.

The thin film transistor substrate having a metal oxide semiconductorlayer shown in FIGS. 1 and 2 includes a gate line GL and a data line DLcrossing each other with a gate insulating layer GI therebetween on alower substrate SUB, and a thin film transistor T formed at eachcrossing portion. By the crossing structure of the gate line GL and thedata line DL, a pixel region is defined.

The thin film transistor T includes a gate electrode G branched (or‘extruded’) from the gate line GL, a source electrode S branched fromthe data line DL, a drain electrode D facing the source electrode S andconnecting to the pixel electrode PXL, and a semiconductor layer Aoverlapping with the gate electrode G on the gate insulating layer GIfor forming a channel between the source electrode S and the drainelectrode D.

The semiconductor layer A made of the oxide semiconductor material has amerit for a large area thin film transistor substrate having a largecharging capacitance, thanks to the high electron mobility of the oxidesemiconductor layer. However, the thin film transistor having the oxidesemiconductor material would have an etch stopper ES for protecting theupper surface of the semiconductor layer from the etching material forensuring the stability and the characteristics of the thin filmtransistor. In more detail, it is proper to have an etch stopper ES forprotecting the semiconductor layer A from the etchant used for formingthe source electrode S and the drain electrode D there-between.

In the pixel region, a pixel electrode PXL and a common electrode COMare formed with the second passivation layer PA2 there-between, to forma fringe electric field. The common electrode COM is connected to thecommon line CL disposed in parallel with the gate line GL. The commonelectrode COM is supplied with a reference voltage (or “common voltage”)via the common line CL.

The common electrode COM and the pixel electrode PXL can have variousshapes and positions according to the design purpose and environment.While the common electrode COM is supplied with a reference voltagehaving constant value, the pixel electrode PXL is supplied with a datavoltage varying timely according to the video data. Therefore, betweenthe data line DL and the pixel electrode PXL, a parasitic capacitancemay be formed. Due to the parasitic capacitance, the video quality ofthe display may be degraded. Therefore, it is preferable to form thecommon electrode COM at first and then the pixel electrode PXL is formedat the topmost layer.

In other words, on the first passivation layer PA1 covering the dataline DL and the thin film transistor T, a planarization layer PAC formedby thickly depositing an organic material having a low permittivity.Then, the common electrode COM is formed. And then, after depositing thesecond passivation layer PA2 to cover the common electrode COM, thepixel electrode PXL overlapping with the common electrode is formed onthe second passivation layer PA2. In this structure, the pixel electrodePXL is far from the data line DL by the first passivation layer PA1, theplanarization layer PAC and the second passivation layer PA2, so that itis possible to reduce the parasitic capacitance between the data line DLand the pixel electrode PXL.

The common electrode COM is formed to a rectangular shape correspondingto the pixel region. The pixel electrode PXL is formed to have aplurality of segments. Especially, the pixel electrode PXL is verticallyoverlapped with the common electrode COM with the second passivationlayer PA2 there-between. Between the pixel electrode PXL and the commonelectrode COM, the fringe electric field is formed. By this fringeelectric field, the liquid crystal molecules arrayed in plane directionbetween the thin film transistor substrate and the color filtersubstrate may be rotated according to the dielectric anisotropy of theliquid crystal molecules. According to the rotation degree of the liquidcrystal molecules, the light transmittance ratio of the pixel region maybe changed so as to represent desired gray scale.

In addition, for using a large current driving method in the activematrix type organic light emitting diode display, the thin filmtransistor substrate including a method oxide semiconductor material isincreasingly required. For the organic light emitting diode display,referring to FIG. 2, an anode electrode (not shown) instead of thecommon electrode COM is formed as to be connected to the drain electrodeD on the planar layer PAC, and an organic light emitting diode may becompleted on the anode electrode. The structure of the thin filmtransistor T, the driving element, is commonly used for various type offlat panel display.

Nowadays, the thin film transistor substrate including a plurality ofthin film transistor having the metal oxide semiconductor is mainly usedin the flat panel display. As mentioned above, as the metal oxidesemiconductor material is very weak against the developers, etchantsand/or strip solutions used for the photo-lithography process, thesemiconductor layer would be preferably protected by an etch stopper.Due to this structure, there may be various problems.

Hereinafter, one of the important problems caused in the thin filmtransistor substrate having the oxide semiconductor according to therelated art will be explained. FIG. 3 is an enlarged cross-sectionalview of circled portion {circle around (1)} in FIG. 2 for illustratingthe structure of the thin film transistor having the oxide semiconductormaterial according to the related art.

On the gate insulating layer GI, depositing a metal oxide semiconductormaterial such as the Indium Gallium Zinc Oxide (IGZO) and patterning itin a mask process, a semiconductor layer A overlapped with the gateelectrode G. Depositing an inorganic insulating material on thesemiconductor layer A and patterning it with another mask process, anetch stopper ES covering some portions of the semiconductor layer A isformed. Then, depositing a source metal material and patterning it withyet another mask process, a source electrode S contacting the oneexposed side of the semiconductor layer A from the etch stopper ES and adrain electrode D contacting the other exposed side of the semiconductorlayer A from the etch stopper ES are formed.

During performing these 3 mask processes, the mask alignment clearanceshould be considered. That is, the etch stopper ES should have thelength longer than the channel length plus at least the mask alignmentclearance. Further, some portions of the source electrode S and thedrain electrode D would be overlapped with the etch stopper ES. Here, wedefined and/or called the overlapped portion between the source-drainelectrodes S and D and the etch stopper ES as the overlapping area OVL.

In the thin film transistor having the metal oxide semiconductormaterial, this overlapping area OVL is one of main cause for degradingthe characteristics of the thin film transistor. For example, in theorganic light emitting diode display, the luminance would be controlledat the saturation area of the thin film transistor, when driving theorganic light emitting diode of the organic light emitting diodedisplay. In this case, if the saturation characteristics of the thinfilm transistor are not guaranteed, this may cause the luminance failureor distortion. In order to guarantee the saturation characteristics ofthe oxide thin film transistor, it is preferable for the size of theoverlapping area OVL to be less than 1 μm (micrometer). However, it isvery hard to make a large area thin film transistor substrate in whichall thin film transistors have almost similar size of the overlappingarea OVL.

Therefore, for developing, designing and mass producing the thin filmtransistor substrate having the oxide semiconductor material, it isrequired to ensure the technology in which the overlapping area would beminimized and/or eliminated, and all thin film transistors have thesimilar channel length.

SUMMARY OF THE INVENTION

In order to overcome and address the above mentioned drawbacks and otherlimitations, the present invention provides a thin film transistorsubstrate including a method oxide semiconductor material in which thechannel length between the source and drain electrodes is optimized, anda method for manufacturing the same. Another purpose of the presentinvention is to suggest a thin film transistor substrate including amethod oxide semiconductor material in which there is no any insulatinglayer such as the etch stopper between the semiconductor layer and thesource-drain electrodes and there is no overlapping area between them,and a method for manufacturing the same.

In order to accomplish the above purpose, one embodiment of the presentinvention suggests a thin film transistor substrate comprising: a gateelectrode on a substrate; a gate insulating layer covering the gateelectrode; a source electrode overlapping with one side of the gateelectrode on the gate insulating layer; a drain electrode being apartfrom the source electrode and overlapping with other side of the gateelectrode on the gate insulating layer; an oxide semiconductor layercontacting an upper surface of the source electrode and the drainelectrode, and extending from the source electrode to the drainelectrode; and an etch stopper having the same shape with the oxidesemiconductor layer, and contacting an upper surface of the oxidesemiconductor layer.

In some embodiments, the source electrode and the drain electrodeincludes: a first metal layer; and a second metal layer stacked on thefirst metal layer, wherein the first metal layer has a tail extrudedfrom outsides of the second metal layer; and wherein the oxidesemiconductor layer contacts an upper surface and an etched side surfaceof the second metal layer, and an upper surface and an etched sidesurface of the tail.

In some embodiments, the first metal layer includes at least one ofmolybdenum and titanium, and the second metal layer includes a lowresistance metal material having copper and aluminum.

In some embodiments, the source electrode and the drain electrodefurther includes a third metal layer stacked on the second metal layer,and the oxide semiconductor layer contacts an upper surface and anetched side surface of the third metal layer, an etched side of thesecond metal layer, and an upper surface and an etched side surface ofthe tail.

In some embodiments, the oxide semiconductor layer includes a metaloxide semiconductor material having Indium Gallium Zinc Oxide.

In some embodiments, the oxide semiconductor layer and the etch stopperhave the same shape and size with a source-drain elements including thesource electrode and the drain electrode.

Further, one embodiment of the present invention suggests a method formanufacturing a thin film transistor substrate comprising: a first maskprocess for forming a gate electrode on a substrate; a step for forminga gate insulating layer covering the gate electrode; a second maskprocess for forming a source electrode overlapping with one side of thegate electrode, and a drain electrode overlapping with other side of thegate electrode and being apart from the source electrode, on the gateinsulating layer; and a third mask process for forming an oxidesemiconductor layer extending from the source electrode to the drainelectrode, and an etch stopper having the same shape and size with theoxide semiconductor layer on the oxide semiconductor layer.

In some embodiments, the second mask process comprises steps for:depositing a source-drain metal layer on the gate insulating layer;depositing a photoresist on the source-drain metal layer; patterning thephotoresist having a first thickness on a source-drain element includingthe source electrode and the drain electrode, and a second thicknessthinner than the first thickness on a space between the source electrodeand the drain electrode, using a half-tone mask; forming a source-drainphotoresist pattern by thinning the photoresist until the photoresist ofthe second thickness is eliminated; patterning the source-drain metallayer with the source-drain photoresist pattern as a mask; and removingthe source-drain photoresist pattern.

In some embodiments, the third mask process comprises steps for:depositing an oxide semiconductor material on the patterned source-drainelement; depositing an inorganic insulating material on the oxidesemiconductor material; depositing a photoresist on the inorganicinsulating material; patterning the photoresist using the half-tonemask; patterning the inorganic insulating layer and the oxidesemiconductor material using the patterned photoresist as a mask; andremoving the patterned photoresist.

According to the present invention, the thin film transistor substratehaving the oxide semiconductor material has a channel area definedprecisely and uniformly over the whole surface of the substrate, byforming the source-drain electrode firstly and then forming asemiconductor layer thereon. The present disclosure has a merit forsuggesting a thin film transistor substrate in which the characteristicsof all thin film transistors are can be optimized and stabilized overwhole substrate. Further, forming a tail at under portion of thesource-drain electrode using a half-tone mask process, the channel layermakes good ohmic contact property with the source-drain electrodes. Inaddition, using the same one half-tone mask at forming the source-drainelectrode and at forming the semiconductor layer, the present disclosuresuggests a method for manufacturing the thin film transistor substratewith low cost.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are included to provide a furtherunderstanding of the invention and are incorporated in and constitute apart of this specification, illustrate embodiments of the invention andtogether with the description serve to explain the principles of theinvention.

FIG. 1 is a plane view illustrating a thin film transistor substratehaving an oxide semiconductor layer included in a fringe field typeliquid crystal display according to the related art.

FIG. 2 is a cross-sectional view illustrating the structure of the thinfilm transistor substrate of FIG. 1 along the line I-I′ according to therelated art.

FIG. 3 is an enlarged cross-sectional view of circled portion {circlearound (1)} in FIG. 2 for illustrating the structure of the thin filmtransistor having the oxide semiconductor material according to therelated art.

FIG. 4 is a plane view illustrating a thin film transistor substratehaving an oxide semiconductor layer included in a fringe field typeliquid crystal display according to a first embodiment of the presentinvention.

FIG. 5 is a cross-sectional view along the cutting line II-IF in FIG. 4for illustrating the structure of the fringe field type thin filmtransistor having an oxide semiconductor layer according to the firstembodiment of the present invention.

FIG. 6 is a cross-sectional view along the cutting line II-IF in FIG. 4for illustrating the structure of the fringe field type thin filmtransistor having an oxide semiconductor layer according to a secondembodiment of the present invention.

FIG. 7 is a plane view illustrating a thin film transistor substratehaving an oxide semiconductor layer included in a fringe field typeliquid crystal display according to a third embodiment of the presentinvention.

FIG. 8 is a cross-sectional view along the cutting line III-III′ in FIG.7 for illustrating the structure of the fringe field type thin filmtransistor having an oxide semiconductor layer according to the thirdembodiment of the present invention.

FIGS. 9A to 9K are cross-sectional views along the cutting line III-III′in FIG. 7 for illustrating the method for manufacturing the fringe fieldtype thin film transistor having an oxide semiconductor layer accordingto the third embodiment of the present invention.

DETAILED DESCRIPTION OF THE ILLUSTRATED EMBODIMENTS

Referring to attached figures, preferred embodiments of the presentinvention will be described. Like reference numerals designate likeelements throughout the detailed description. However, the presentdisclosure is not restricted by these embodiments but can be applied tovarious changes or modifications without changing the technical spirit.In the following embodiments, the names of the elements are selected forease of explanation and may be different from actual names.

Referring to FIGS. 4 and 5, the first embodiment of the presentdisclosure will be explained. In convenience the thin film transistorsubstrate for the liquid crystal display will be explained. However, itcan be applied to the thin film transistor substrate for the organiclight emitting diode display. FIG. 4 is a plane view illustrating a thinfilm transistor substrate having an oxide semiconductor layer includedin a fringe field type liquid crystal display according to the firstembodiment of the present disclosure. FIG. 5 is a cross-sectional viewalong the cutting line II-IF in FIG. 4 for illustrating the structure ofthe fringe field type thin film transistor having an oxide semiconductorlayer according to the first embodiment of the present disclosure.

Referring to FIGS. 4 and 5, the thin film transistor substrate having anoxide semiconductor layer according to the present disclosure comprisesa gate line GL and a data line DL crossing each other with a gateinsulating layer GI there-between on a lower substrate SUB, and a thinfilm transistor T formed each pixel region defined by the crossingstructure of the gate line GL and the data line DL.

The thin film transistor T comprises a gate electrode G branching outfrom the gate line GL, a source electrode S branching from the data lineDL, a drain electrode D facing with the source electrode S, and asemiconductor layer A overlapping with the gate electrode G andincluding a channel area between the source electrode S and the drainelectrode D.

In the present disclosure, the source electrode S and the drainelectrode D are firstly formed on the gate insulating layer GI coveringthe gate electrode G. The source electrode S and the drain electrode Dare facing each other with a predetermined distance and some portions ofthem are overlapping with the gate electrode G, respectively.

On the source electrode S and the drain electrode D, a semiconductorlayer A is formed. Particularly, in the case that the semiconductorlayer A includes an oxide semiconductor material such as the IndiumGallium Zinc Oxide, thanks to the high carrier mobility, it has manymerits for the large area thin film transistor substrate in which thelarge capacitance is required. The semiconductor layer A contacts theupper some portions of the source electrode S and the drain electrode D,respectively. Further, it covers the middle portions of the gateelectrode G, as expanding from the source electrode S to the drainelectrode D. The distance from the source electrode S and the drainelectrode D would define the length of the channel area. In thisstructure, when patterning the source-drain electrodes S and D, thechannel area would be defined. As the source-drain electrodes S and Dare contacting the semiconductor layer A directly, the channel area canbe exactly and precisely defined. Further, all channel areas disposed onthe whole substrate have almost same lengths.

If required, an etch stopper ES may be formed over the semiconductorlayer A having the same size and shape with the semiconductor layer A.In that case, the etch stopper ES can protect the semiconductor layer Afrom the developer, the etchant and/or the stripper during thephoto-lithography process. Further, in that case, the etch stopper ES isnot overlapped with any portion of the source-drain electrodes S and D.Therefore, the characteristics of the semiconductor layer A, especiallythe channel area, would be maintained in a stable condition.

Like this, as the source-drain electrodes S and D are firstly formed andthen the semiconductor layer A having the metal oxide semiconductormaterial is stacked thereon, the thin film transistor T is completed. Onthe whole surface of the substrate SUB having the thin film transistorT, a first passivation layer PA1 is deposited.

In the pixel region, a pixel electrode PXL and a common electrode COMare disposed in which they are overlapped with a second passivationlayer PA2 therebetween. The common electrode COM is connected to thecommon line CL disposed on the substrate SUB as being parallel with thegate line GL. The common electrode COM is supplied with a referencevoltage (or common voltage) from the common line CL.

While the common electrode COM is supplied with a reference voltagehaving constant value, the pixel electrode PXL is supplied with a datavoltage varying timely according to the video data. As a result, betweenthe data line DL and the pixel electrode PXL, a parasitic capacitancemay be formed. Due to the parasitic capacitance, the video quality ofthe display may be degraded. Therefore, it is preferable to form thecommon electrode COM at first and then the pixel electrode PXL is formedat the topmost layer.

To do so, on the first passivation layer PA1 covering the data line DLand the thin film transistor T, a planar layer PAC formed by thicklydepositing an organic material having a low permittivity. Then, thecommon electrode COM is formed on the planar layer PAC. The commonelectrode COM may have the shape as covering the almost surface of thesubstrate SUB excepting the thin film transistor T. Otherwise the commonelectrode COM may cover the almost surface of the substrate SUBexcepting the certain area COMh including contact hole CH for exposingsome portions of the drain electrode D.

After depositing the second passivation layer PA2 covering the commonelectrode COM, the pixel electrode PXL overlapping with the commonelectrode COM is formed on the second passivation layer PAS2. In thisstructure, as the pixel electrode PXL is disposed far from the data lineDL by the first passivation layer PA1, the planar layer PAC and thesecond passivation layer PA2, the parasitic capacitances can be reducedor minimized.

A contact hole CH exposing some portions of the drain electrode D isformed by penetrating the second passivation layer PA2, the planar layerPAC and the first passivation layer PAL On the second passivation layerPA2, a pixel electrode PXL is formed as being contacting the drainelectrode D through the contact hole CH. The pixel electrode PXL mayhave a plurality of segments being disposed in parallel each other.Especially, the pixel electrode PXL is vertically overlapped with thecommon electrode COM with the second passivation layer PAS therebetween.

By this fringe electric field between the pixel electrode PXL and thecommon electrode COM, the liquid crystal molecules arrayed in planedirection between the thin film transistor substrate and the colorfilter substrate may be rotated according to the dielectric anisotropyof the liquid crystal molecules. According to the rotation degree of theliquid crystal molecules, the light transmittance ratio of the pixelregion may be changed so as to represent desired gray scale.

In the thin film transistor substrate according to the first embodimentof the present disclosure, the oxide semiconductor layer A is depositedwith the thickness of about 600 Å. In the case that the source-drainelectrodes S and D are made of low resistance metal material such ascopper or aluminum, these electrodes may be peeled off due to the badsurface contact between the copper and the IGZO. This may cause theunstable ohmic contact between the source-drain electrodes S and D andthe semiconductor layer A.

As a method for addresing or minimizing the above-mentioned limitationassociated with the first embodiment, referring to FIGS. 4 and 6, thesecond embodiment of the present disclosure will be explained. For thestructure of plane view, the thin film transistor substrate according tothe second embodiment is similar with that of the first embodiment.Therefore, FIG. 4 will be used as the plane view. For explainingdifferences, FIG. 6 shows the cross-sectional structure of the secondembodiment. FIG. 6 is a cross-sectional view along the cutting lineII-IF in FIG. 4 for illustrating the structure of the fringe field typethin film transistor having an oxide semiconductor layer according tothe second embodiment of the present disclosure.

Comparing FIG. 6 showing the structure of the thin film transistoraccording to the second embodiment with the FIG. 5 showing that of thefirst embodiment, one of main differences is on the structure andformation of the source-drain electrodes S and D.

The source-drain electrodes S and D have the three-layered structure.For example, the source-drain electrodes S and D include a first metallayer M1, a second metal layer M2 and a third metal layer M3, stackedsequentially. For the second metal layer M2 may include a low resistancemetal material such as copper or aluminum used for line material. In theinterim, the first metal layer M1 and the third metal layer M3 mayinclude a protective metal material such as molybdenum (Mo), titanium(Ti) or molybdenum-titanium alloy (MoTi) for ensuring the surfacecontact property with other material layer and reinforcing theanti-corrosion property and/or the anti-chemistry property.

Particularly, the first metal layer M1 disposed at the lowest layerpreferably has the same shape with other metal layers M2 and M3 butlarger size than them. That is, the first metal layer M1 includes a tailTL (or, extruded portion) to the lateral sides from the second metallayer M2.

Disposed on the second metal layer M2, the third metal layer M3 canprevent the second metal layer M2 when patterning the semiconductorlayer A and/or the etch stopper ES. Further, the third metal layer M3preferably has superior interface property with the metal oxidesemiconductor material than the second metal layer M2.

Due to the first metal layer M1 and the third metal layer M3, thesemiconductor layer A having the metal oxide semiconductor material hasan enough contact area with the source-drain electrodes S and D, andmaintains better ohmic contact condition with them.

In order to form the first metal layer M1 as having the tail TL,modifying the components (materials or composition ratio) of the etchantor controlling the etching time intervals during the etching process,the second metal layer M2 may be formed as being overetched than thefirst metal layer M1. Otherwise, by performing the photo-resist ashingstep in a half-tone mask process, the first metal layer M1 may be formedas having the tail TL.

Hereinafter, referring to FIGS. 7 and 8, the third embodiment of thepresent disclosure will be explained. In the third embodiment, thepresent invention suggests a structure of the thin film transistorsubstrate in which the purpose in the second embodiment can beaccomplished easier and simpler than the second embodiment. FIG. 7 is aplane view illustrating a thin film transistor substrate having an oxidesemiconductor layer included in a fringe field type liquid crystaldisplay according to the third embodiment of the present disclosure.FIG. 8 is a cross-sectional view along the cutting line III-III′ in FIG.7 for illustrating the structure of the fringe field type thin filmtransistor having an oxide semiconductor layer according to the thirdembodiment of the present disclosure.

At first, comparing FIG. 8 showing the structure of the thin filmtransistor according to the third embodiment with FIG. 5 showing that ofthe first embodiment, the main differences are on the structure andformation of the source-drain electrodes S and D and the structure andformation of the semiconductor layer A and the etch stopper ES.

The source-drain electrodes S and D are formed as being two layeredstructure. For example, the source-drain electrodes S and D have a firstmetal layer M1 and a second metal layer M2 stacked sequentially. For thesecond metal layer M2 may include a low resistance metal material suchas copper or aluminum used for line material. In the interim, the firstmetal layer M1 may include a protective metal material such asmolybdenum (Mo), titanium (Ti) or molybdenum-titanium alloy (MoTi) forensuring the surface contact property with other material layer andreinforcing the anti-corrosion property and/or the anti-chemistryproperty.

Particularly, the first metal layer M1 disposed at the lowest layerpreferably has the same shape with other metal layers M2 and M3 butlarger size than them. That is, the first metal layer M1 includes a tailTL (or, extruded portion) to the lateral sides from the second metallayer M2. The semiconductor layer A deposited thereon covers on thesource-drain electrodes S and D along the step shape formed at thecircumstance of the source-drain electrodes S and D. As a result, thesemiconductor layer A may make a good ohmic contact property with thesource-drain electrodes S and D.

According to the third embodiment, the semiconductor layer A and theetch stopper ES have the same outer shape with the source-drainelectrode S-D. That is, the semiconductor layer A covers and contactsthe whole upper surface of the source-drain electrodes S and D. As theresult, the interface contact property between the semiconductor layer Aand the source-drain electrodes S and D may be enhanced.

Like this, in order to form the semiconductor layer A as having the sameouter shape with the source-drain electrodes S and D, in the thirdembodiment, the same mask would be used. Especially, in order to formthe tail TL at the first metal layer M1, it is preferable to use ahalf-tone mask. Hereinafter, referring to FIGS. 9A to 9K, the method formanufacturing the thin film transistor substrate according to the thirdembodiment will be explained. FIGS. 9A to 9K are cross-sectional viewsalong the cutting line III-III′ in FIG. 7 for illustrating the methodfor manufacturing the fringe field type thin film transistor having anoxide semiconductor layer according to the third embodiment of thepresent disclosure.

As shown in FIG. 9A, on the transparent substrate SUB such as a glass, agate metal material is deposited. Patterning the gate metal materialusing a first mask process, gate elements are formed. The gate elementsinclude a gate line GL extending to a first direction on the substrateSUB, and a gate electrode G branching from the gate line GL. On thesubstrate SUB having the gate elements, a gate insulating layer GI isformed.

On the gate insulating layer GI, a first metal layer M1 and a secondmetal layer M2 are deposited sequentially. Patterning them using asecond mask process, source-drain elements are formed. The first metallayer M1 includes molybdenum (Mo) and/or titanium (Ti). The second metallayer M2 includes a low resistance metal material such as copper (Cu)and/or aluminum (Al). In the third embodiment, one of main features ison the second mask process for forming the source-drain elements.Hereinafter, the second mask process will be explained in detail.

As shown in FIG. 9B, on the second metal layer M2, a photoresist PR isdeposited. Using a half-tone mask MA, the exposure process is performedon the photoresist PR. For example, the half-tone mask MA includes afull tone portion FT where the light would be perfectly blocked and ahalf tone portion HT where some portions of the light, i.e., 40˜60% ofthe light, would be transmitted. Further, a full exposed portion wherethe full intensity of light is transmitted is included for otherportions of area. Here, the full tone portion FT has a shapecorresponding to the shape of the source-drain elements. The half toneportion HT has a shape corresponding to the channel area in thesemiconductor layer A. The half tone portion HT is disposed between thesource electrode S and the drain electrode D.

As shown in FIG. 9C, a developing process is conducted to thephotoresist PR exposed using the half-ton mask MA. As the result, thephotoresist may be formed as having a first thickness at the full toneportion FT and a second thickness thinner than the first thickness atthe half-ton portion HT. Further, photoresist PR at the other area wouldbe eliminated. After that, an ashing process is conducted to thephotoresist PR until the photoresist PR is thinned as the secondthickness of the photoresist PR is removed. As the result, only at thefull tone portion FT, the photoresist PRA is remained.

After ashing, using the remained photoresist PRA on the second metallayer M2, the second metal layer M2 and the first metal layer M1 aresequentially etched to form the source-drain elements. The source-drainelements include a data line DL extending to a second direction, asource electrode S branching from the data line DL, and a drainelectrode D facing to the source electrode S with a predetermineddistance apart. In addition, the first metal layer M1 of thesource-drain elements has a tail TL extruded to outer side from thesecond metal layer M2. The source-drain gap GSD, the distance betweenthe source electrode S and the drain electrode D, may be defined by thedistance formed by the depart portions of the first metal layer M1, asshown in FIG. 9D.

On the substrate SUB having the source-drain elements, a metal oxidesemiconductor material OSE such as the Indium Gallium Zinc Oxide, and aninorganic insulating material INM such as the silicon oxide (SiOx) orsilicon nitride (SiNx) are sequentially deposited. Patterning them usinga third mask process, a semiconductor layer A and an etch stopper ES areformed. In the third embodiment, one of main features is also on thethird mask process. Hereinafter, the second mask process will beexplained in detail.

As shown in FIG. 9E, on the inorganic insulating material INM, aphotoresist PR is deposited. Using the same half-tone mask MA used forthe source-drain elements, the exposure process is conducted on thephotoresist PR. That is the same mask for source-drain elements is usedagain and the same exposure process with the same condition is used.

After that, conducting a developing process, the photoresist is remainedon a full tone portion FT and a half tone portion HT have PR. Forexample, on the inorganic insulating material INM, the photoresist PR isformed as having a first thickness at the full tone portion and a secondthickness thinner than the first thickness at the half tone portion. Onthe other portions, there is no photoresist, as shown in FIG. 9F.

Using the patterned photoresist PR as a mask, the inorganic insulatingmaterial INM and the metal oxide semiconductor material OSE aresequentially patterned to form the etch stopper ES and the semiconductorlayer A. The semiconductor layer A contacts all upper surfaces of thesource electrode S and the drain electrode D and overlaps with the gateelectrode G disposed between the source electrode S and the drainelectrode D. As the result, the source-drain gap GSD, the distancebetween the source electrode S and the drain electrode D, defines thechannel length CHL. Especially, as the same mask is used for forming thesource-drain element and for forming the etch stopper ES and thesemiconductor layer A, the etch stopper ES and the semiconductor layer Ahas a shape as stacking on the source-drain elements, as shown in FIG.9G.

Now, the thin film transistor T is completed. On the substrate SUBhaving the thin film transistor T, a first passivation layer PA1 and aplanar layer PAC are deposited. On the planar layer PAC, a transparentconductive material such as the Indium Tin Oxide (ITO) or the IndiumZinc Oxide (IZO) is deposited. Patterning it with a fourth mask, acommon electrode COM is formed. It is preferable that the commonelectrode COM has a shape covering all most of the surface of thesubstrate SUB excepting some area COMh including the contact hole CH forconnecting the pixel electrode PXL and the drain electrode D, as shownin FIG. 9H.

With a fifth mask process, some portions of the planar layer PAC, thefirst passivation layer PA1, the etch stopper ES and the semiconductorlayer A are etched. As the result, a first contact hole CH1 exposingsome portions of the drain electrode D is formed, as shown in FIG. 9I.

Depositing an inorganic insulating material on the whole surface of thesubstrate SUB having the common electrode COM, a second passivationlayer PA2 is formed. Patterning the second passivation layer PA2 with asixth mask process, a second contact hole CH2 exposing some portions ofthe drain electrode D is formed. It is preferable that the secondcontact hole CH2 is included into the first contact hole CH1, as shownin FIG. 9J.

Depositing a transparent conductive material on the second passivationlayer PA2 and patterning it with a seventh mask process, the pixel areaPXL is formed. For the case of the fringe field type liquid crystaldisplay, the pixel electrode PXL may have a plurality of segmentsoverlapping with the common electrode COM, as shown in FIG. 9K.

Even though it is not showing in figures, the sixth mask process may beincluded in the fifth mask process. For example, after forming thecommon electrode COM with the fourth mask process, the secondpassivation layer PA2 may be directly deposited without forming thefirst contact hole CHL Then, patterning some portions of the secondpassivation layer PA2, the planar layer PAC, the first passivation layerPA1, the etch stopper ES and the semiconductor layer A over the drainelectrode D with the fifth mask process, a contact hole CH exposing someportions of the drain electrode D may be formed.

The method for manufacturing the thin film transistor substrate havingthe metal oxide semiconductor material according to the third embodimenthave a merit for saving the cost for the mask process by using one samemask in two different mask processes. In addition, using the half-tonemask, the number of mask process may be reduced also. Even further,using the half-tone mask process, the lower metal layer of thesource-drain elements has the tail TL, easily and precisely. As thesource-drain element has the same shape and size with the semiconductorlayer A, the semiconductor layer A makes an ohmic contact with thesource-drain elements.

While the embodiments of the present invention have been described indetail with reference to the drawings, it will be understood by thoseskilled in the art that the invention can be implemented in otherspecific forms without changing the technical spirit or essentialfeatures of the invention. Therefore, it should be noted that theforgoing embodiments are merely illustrative in all aspects and are notto be construed as limiting the invention. The scope of the invention isdefined by the appended claims rather than the detailed description ofthe invention. All changes or modifications or their equivalents madewithin the meanings and scope of the claims should be construed asfalling within the scope of the invention.

What is claimed is:
 1. A thin film transistor substrate, comprising: agate electrode on a substrate; a gate insulating layer covering the gateelectrode; a source electrode overlapping with one side of the gateelectrode on the gate insulating layer; a drain electrode being apartfrom the source electrode and overlapping with other side of the gateelectrode on the gate insulating layer; an oxide semiconductor layercontacting an upper surface of the source electrode and the drainelectrode, and extending from the source electrode to the drainelectrode; and an etch stopper having the same shape with the oxidesemiconductor layer, and contacting an upper surface of the oxidesemiconductor layer.
 2. The thin film transistor substrate according toclaim 1, wherein the source electrode and the drain electrode include: afirst metal layer; and a second metal layer stacked on the first metallayer, wherein the first metal layer has a tail extruded from outsidesof the second metal layer; and wherein the oxide semiconductor layercontacts an upper surface and an etched side surface of the second metallayer, and an upper surface and an etched side surface of the tail. 3.The thin film transistor substrate according to claim 2, wherein thefirst metal layer includes at least one of molybdenum and titanium, andwherein the second metal layer includes a low resistance metal materialhaving copper and aluminum.
 4. The thin film transistor substrateaccording to claim 2, wherein the source electrode and the drainelectrode further include a third metal layer stacked on the secondmetal layer, and wherein the oxide semiconductor layer contacts an uppersurface and an etched side surface of the third metal layer, an etchedside of the second metal layer, and an upper surface and an etched sidesurface of the tail.
 5. The thin film transistor substrate according toclaim 1, wherein the oxide semiconductor layer includes a metal oxidesemiconductor material having Indium Gallium Zinc Oxide.
 6. The thinfilm transistor substrate according to claim 1, wherein the oxidesemiconductor layer and the etch stopper have the same shape and sizewith a source-drain elements including the source electrode and thedrain electrode.
 7. A method for manufacturing a thin film transistorsubstrate, the method comprising: a first mask process for forming agate electrode on a substrate; a step for forming a gate insulatinglayer covering the gate electrode; a second mask process for forming asource electrode overlapping with one side of the gate electrode, and adrain electrode overlapping with other side of the gate electrode andbeing apart from the source electrode, on the gate insulating layer; anda third mask process for forming an oxide semiconductor layer extendingfrom the source electrode to the drain electrode, and an etch stopperhaving the same shape and size with the oxide semiconductor layer on theoxide semiconductor layer.
 8. The method according to claim 7, whereinthe second mask process comprises steps of: depositing a source-drainmetal layer on the gate insulating layer; depositing a photoresist onthe source-drain metal layer; patterning the photoresist having a firstthickness on a source-drain element including the source electrode andthe drain electrode, and a second thickness thinner than the firstthickness on a space between the source electrode and the drainelectrode, using a half-tone mask; forming a source-drain photoresistpattern by thinning the photoresist until the photoresist of the secondthickness is eliminated; patterning the source-drain metal layer withthe source-drain photoresist pattern as a mask; and removing thesource-drain photoresist pattern.
 9. The method according to claim 8,wherein the third mask process comprises steps of: depositing an oxidesemiconductor material on the patterned source-drain element; depositingan inorganic insulating material on the oxide semiconductor material;depositing a photoresist on the inorganic insulating material;patterning the photoresist using the half-tone mask; patterning theinorganic insulating layer and the oxide semiconductor material usingthe patterned photoresist as a mask; and removing the patternedphotoresist.